MF0ICU1001W(2010) Просмотр технического описания (PDF) - NXP Semiconductors.
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MF0ICU1001W Datasheet PDF : 28 Pages
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NXP Semiconductors
MF0ICU1
MIFARE Ultralight contactless single-ticket IC
6. Mechanical specification
Table 3. Specifications
Wafer
diameter
maximum diameter after foil expansion
thickness
flatness
Potential Good Dies per Wafer (PGDW)
Wafer underside
material
flatness
roughness
Chip dimensions
step size
gap between chips
Passivation
type
material
thickness
Au bump (substrate connected to VSS)
material
hardness
shear strength
height
height uniformity
flatness
size
size variation
under bump metallization
200 mm (8 inches)
210 mm
120 μm ±15 μm (U7DL types)
75 μm ±15 μm (S7DL types)
not applicable
72778
Si
not applicable
Ra max = 0.5 μm
Rt max = 5 μm
x = 645 μm
y = 665 μm
typical = 20 μm
minimum = 5 μm
sandwich structure
PSG/nitride (on top)
500 nm/600 nm
99.9 % pure Au
35 to 80 HV 0.005
>70 MPa
18 μm
within a die = ±2 μm
within a wafer = ±3 μm
wafer to wafer = ±4 μm
minimum = ±1.5 μm
LA, LB and VSS = 90 μm × 90 μm
TESTIO = 60 μm × 60 μm
±5 μm
sputtered TiW
6.1 Fail die identification
The wafers are not inked.
Electronic wafer mapping (SECS II format) covers the electrical test results and the
additional mechanical/visual inspection results.
MF0ICU1
Product data sheet
PUBLIC
All information provided in this document is subject to legal disclaimers.
Rev. 3.8 — 22 December 2010
028638
© NXP B.V. 2010. All rights reserved.
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