BF908 Просмотр технического описания (PDF) - NXP Semiconductors.
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BF908 Datasheet PDF : 9 Pages
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NXP Semiconductors
Dual-gate MOS-FETs
Product specification
BF908; BF908R
40
handbook, halfpage
ID
(mA)
30
20
MRC281
VG2-S = 4 V
3V
2V
1.5 V
1V
0.5 V
10
0
−0.6 −0.4 −0.2 0
0V
0.2 0.4 0.6
VG1-S (V)
VDS = 8 V; Tj = 25 °C.
Fig.4 Transfer characteristics; typical values.
30
handbook, halfpage
ID
(mA)
20
10
0
0
4
MRC282
VG1-S = 0.3 V
0.2 V
0.1 V
0V
−0.1 V
−0.2 V
−0.3 V
8
12
16
VDS (V)
VG2-S = 4 V; Tj = 25 °C.
Fig.5 Output characteristics; typical values.
50
Yfs
(mS)
40
30
20
0.5 V
10
VG2-S = 0 V
0
0
5
10
15
MRC280
4V
3V
2V
1.5 V
1V
20
25
ID (mA)
VDS = 8 V; Tj = 25 °C.
Fig.6 Forward transfer admittance as a function
of drain current; typical values.
60
Yfs
(mS)
40
MRC276
20
0
40
0
40
80
120
160
T j (o C)
VDS = 8 V; VG2-S = 4 V; ID = 15 mA.
Fig.7 Forward transfer admittance as a function
of junction temperature; typical values.
Rev. 03 - 14 November 2007
5 of 9
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