BF908 Просмотр технического описания (PDF) - NXP Semiconductors.
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BF908 Datasheet PDF : 9 Pages
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NXP Semiconductors
Dual-gate MOS-FETs
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VDS
drain-source voltage
ID
drain current
±IG1
gate 1 current
±IG2
gate 2 current
Ptot
total power dissipation
see Fig.3; note 1
BF908
up to Tamb = 50 °C
BF908R
up to Tamb = 40 °C
Tstg
storage temperature
Tj
operating junction temperature
Note
1. Device mounted on a printed-circuit board.
250
handPbtooot k, halfpage
(mW)
200
BF908
150
BF908R
100
50
0
0
50
100
MRC275
150
200
Tamb (o C)
Product specification
BF908; BF908R
MIN.
−
−
−
−
MAX.
12
40
10
10
UNIT
V
mA
mA
mA
−
200
mW
−
200
mW
−65
+150
°C
−
150
°C
Fig.3 Power derating curves.
Rev. 03 - 14 November 2007
3 of 9
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