BF908 Просмотр технического описания (PDF) - NXP Semiconductors.
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BF908 Datasheet PDF : 9 Pages
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NXP Semiconductors
Dual-gate MOS-FETs
Product specification
BF908; BF908R
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to ambient
BF908
BF908R
Note
1. Device mounted on a printed-circuit board.
CONDITIONS
note 1
VALUE
UNIT
500
K/W
550
K/W
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
±V(BR)G1-SS
±V(BR)G2-SS
−V(P)G1-S
−V(P)G2-S
IDSS
±IG1-SS
±IG2-SS
gate 1-source breakdown voltage
gate 2-source breakdown voltage
gate 1-source cut-off voltage
gate 2-source cut-off voltage
drain-source current
gate 1 cut-off current
gate 2 cut-off current
VG2-S = VDS = 0; IG1-S = 10 mA
8
VG1-S = VDS = 0; IG2-S = 10 mA
8
VG2-S = 4 V; VDS = 8 V; ID = 20 µA −
VG1-S = 4 V; VDS = 8 V; ID = 20 µA −
VG2-S = 4 V; VDS = 8 V; VG1-S = 0 3
VG2-S = VDS = 0; VG1-S = 5 V
−
VG1-S = VDS = 0; VG2-S = 5 V
−
−
20 V
−
20 V
−
2
V
−
1.5 V
15 27 mA
−
50 nA
−
50 nA
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VDS = 8 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
yfs
Cig1-s
Cig2-s
Cos
Crs
F
forward transfer admittance
input capacitance at gate 1
pulsed; Tj = 25 °C; f = 1 MHz
f = 1 MHz
36 43 50 mS
2.4 3.1 4
pF
input capacitance at gate 2 f = 1 MHz
1.2 1.8 2.5 pF
output capacitance
f = 1 MHz
1.2 1.7 2.2 pF
reverse transfer capacitance f = 1 MHz
20 30 45 fF
noise figure
f = 200 MHz; GS = 2 mS; BS = BSopt −
f = 800 MHz; GS = GSopt; BS = BSopt −
0.6 1.2 dB
1.5 2.5 dB
Rev. 03 - 14 November 2007
4 of 9
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