BF908 Просмотр технического описания (PDF) - NXP Semiconductors.
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производитель
BF908 Datasheet PDF : 9 Pages
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NXP Semiconductors
Dual-gate MOS-FETs
Product specification
BF908; BF908R
Table 1 Scattering parameters
f
(MHz)
s11
MAGNITUDE
(ratio)
ANGLE
(deg)
s21
MAGNITUDE
(ratio)
ANGLE
(deg)
s12
MAGNITUDE
(ratio)
ANGLE
(deg)
s22
MAGNITUDE
(ratio)
ANGLE
(deg)
VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 °C.
50
100
200
300
400
500
600
700
800
900
1 000
0.998
0.994
0.979
0.962
0.939
0.914
0.892
0.865
0.837
0.811
0.785
−5.1
−10.4
−20.8
−30.3
−40.1
−49.1
−57.1
−64.4
−71.6
−78.1
−84.5
3.537
3.502
3.450
3.318
3.234
3.093
2.912
2.774
2.616
2.479
3.329
VDS = 8 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C.
50
100
200
300
400
500
600
700
800
900
1 000
0.998
0.994
0.976
0.957
0.934
0.907
0.885
0.851
0.826
0.797
0.773
−5.3
−10.9
−21.6
−31.7
−41.7
−51.1
−59.1
−66.8
−73.9
−80.7
−87.0
3.983
3.943
3.878
3.722
3.614
3.446
3.240
3.072
2.891
2.733
2.569
173.5
167.7
154.9
143.7
131.9
120.7
111.1
101.0
91.4
81.9
72.5
173.4
167.5
154.7
143.3
131.6
120.4
110.9
100.9
91.3
81.9
72.8
0.001
0.001
0.003
0.004
0.005
0.006
0.005
0.005
0.004
0.004
0.003
0.001
0.001
0.003
0.004
0.005
0.006
0.005
0.005
0.004
0.004
0.004
98.2
88.8
74.6
69.5
65.6
64.4
63.1
65.2
70.8
87.4
108.0
95.5
93.6
74.3
70.0
63.5
62.2
59.6
64.8
67.8
85.0
102.9
0.996
0.994
0.987
0.983
0.980
0.974
0.969
0.966
0.965
0.965
0.966
0.994
0.991
0.984
0.979
0.975
0.969
0.964
0.961
0.959
0.958
0.958
−2.4
−4.9
−9.5
−13.9
−18.5
−22.8
−27.0
−31.2
−35.4
−39.4
−43.7
−2.4
−5.0
−9.7
−14.2
−18.8
−23.2
−27.4
−31.6
−35.9
−40.0
−44.2
Table 2 Noise data
f
(MHz)
Fmin
(dB)
VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 °C.
800
1.50
VDS = 8 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C.
800
1.50
Γopt
(ratio)
(deg)
0.720
56.7
0.700
59.2
rn
0.580
0.520
Rev. 03 - 14 November 2007
6 of 9
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