SUB65P06-20 Просмотр технического описания (PDF) - Temic Semiconductors
Номер в каталоге
Компоненты Описание
производитель
SUB65P06-20 Datasheet PDF : 4 Pages
| |||
SUP/SUB65P06-20
Typical Characteristics (25_C Unless Otherwise Noted)
On-Resistance vs. Junction Temperature
2.5
Source-Drain Diode Forward Voltage
100
VGS = 10 V
ID = 30 A
2.0
1.5
TJ = 150_C
TJ = 25_C
10
1.0
0.5
0
–50 –25 0 25 50 75 100 125 150 175
TJ – Junction Temperature (_C)
Thermal Ratings
Maximum Avalanche and Drain Current
vs. Case Temperature
80
60
40
20
1
0.3
0.3
0.6
0.9
1.2
1.5
VSD – Source-to-Drain Voltage (V)
Safe Operating Area
500
100
Limited by rDS(on)
10
1
TC = 25_C
Single Pulse
10 ms
100 ms
1 ms
10 ms
100 ms
dc
0
0 25 50 75 100 125 150 175
TC – Case Temperature (_C)
0.1
0.1
1
10
100
VDS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1 Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
10–5
4
Single Pulse
10–4
10–3
10–2
Square Wave Pulse Duration (sec)
10–1
1
3
Siliconix
P-39628—Rev. A, 28-Dec-94
Share Link: 