SUB65P06-20 Просмотр технического описания (PDF) - Temic Semiconductors
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производитель
SUB65P06-20 Datasheet PDF : 4 Pages
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SUP/SUB65P06-20
Typical Characteristics (25_C Unless Noted)
Output Characteristics
200
200
VGS = 10, 9, 8 V
7V
160
160
120
120
6V
Transfer Characteristics
TC = –55_C
25_C
125_C
80
40
0
0
100
5V
4V
2
4
6
8
10
VDS – Drain-to-Source Voltage (V)
Transconductance
80
40
0
0
2
4
6
8
10
VGS – Gate-to-Source Voltage (V)
0.030
On-Resistance vs. Drain Current
80
TC = –55_C
0.025
25_C
0.020
VGS = 10 V
60
125_C
0.015
40
VGS = 20 V
0.010
20
0.005
0
0
6000
20
40
60
80
100
VGS – Gate-to-Source Voltage (V)
Capacitance
0
0
20
40
60
80
100
ID – Drain Current (A)
Gate Charge
20
5000
4000
3000
2000
1000
Crss
Ciss
Coss
16
VDS = 30 V
ID = 65 A
12
8
4
0
0
10
20
30
40
50
60
VDS – Drain-to-Source Voltage (V)
0
0 25 50 75 100 125 150 175
Qg – Total Gate Charge (nC)
Siliconix
3
P-39628—Rev. A, 28-Dec-94
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