SUB65P06-20 Просмотр технического описания (PDF) - Temic Semiconductors
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SUB65P06-20 Datasheet PDF : 4 Pages
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SUP/SUB65P06-20
P-Channel Enhancement-Mode Transistors
Product Summary
V(BR)DSS (V)
–60
rDS(on) (W)
0.020
ID (A)
–65a
TOĆ220AB
S
TOĆ263
G
DRAIN connected to TAB
GD S
Top View
SUP65P06Ć20
GDS
Top View
SUB65P06Ć20
D
PĆChannel MOSFET
Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
Continuous Drain Current
(TJ = 175_C)
Pulsed Drain Current
TC = 25_C
TC = 125_C
Avalanche Current
Repetitive Avalanche Energyb
L = 0.1 mH
Power Dissipation
TC = 25_C (TO-220AB and TO-263)
TA = 125_C (TO-263)c
Operating Junction and Storage Temperature Range
Thermal Resistance Ratings
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
"20
V
–65a
–39
A
–200
–60
180
mJ
187d
W
3.7
–55 to 175
_C
Parameter
Symbol
Limit
Unit
Junction-to-Ambient
PCB Mount (TO-263)c
Free Air (TO-220AB)
RthJA
RthJA
40
62.5
_C/W
Junction-to-Case
RthJC
0.8
Notes:
a. Package limited.
b. Duty cycle v 1%.
c. When mounted on 1” square PCB (FR-4 material).
d. See SOA curve for voltage derating.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70289.
A SPICE Model data sheet is available for this product (FaxBack document #70543).
Siliconix
1
P-39628—Rev. A, 28-Dec-94
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