SUB65P06-20 Просмотр технического описания (PDF) - Temic Semiconductors

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SUB65P06-20

P-Channel Enhancement-Mode Transistors

Temic Semiconductors 

SUP/SUB65P06-20

Specifications (TJ = 25_C Unless Otherwise Noted)

Parameter

Symbol

Test Condition

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Currentb

Drain-Source On-State Resistanceb

Forward Transconductanceb

Dynamica

V(BR)DSS

VGS(th)

IGSS

IDSS

ID(on)

rDS(on)

gfs

VGS = 0 V, ID = –250 mA

VDS = VGS, ID = –250 mA

VDS = 0 V, VGS = "20 V

VDS = –60 V, VGS = 0 V

VDS = –60 V, VGS = 0 V, TJ = 125_C

VDS = –60 V, VGS = 0 V, TJ = 175_C

VDS = –5 V, VGS = –10 V

VGS = –10 V, ID = –30 A

VGS = –10 V, ID = –30 A, TJ = 125_C

VGS = –10 V, ID = –30 A, TJ = 175_C

VDS = –15 V, ID = –30 A

Input Capacitance

Ciss

Output Capacitance

Coss

VGS = 0 V, VDS = –25 V, f = 1 MHz

Reversen Transfer Capacitance

Total Gate Chargec

Gate-Source Chargec

Gate-Drain Chargec

Turn-On Delay Timec

Rise Timec

Turn-Off Delay Timec

Fall Timec

Crss

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

VDS = –30 V, VGS = –10 V, ID = –65 A

VDD = –30 V, RL = 0.47 W

ID ] –65 A, VGEN = –10 V, RG = 2.5 W

Source-Drain Diode Ratings and Characteristics (TC = 25_C)a

Continuous Current

Pulsed Current

Forward Voltageb

Reverse Recovery Time

Peak Reverse Recovery Current

Reverse Recovery Charge

Is

ISM

VSD

trr

IRM(REC)

Qrr

IF = –65 A, VGS = 0 V

IF = –65 A, di/dt = 100 A/ms

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width v 300 ms, duty cycle v 2%.

c. Independent of operating temperature.

Min Typ Max Unit

–60

V

–2.0 –3.0 –4.0

"100 nA

–1

–50 mA

–150

–120

A

0.017 0.020

0.033 W

0.042

25

S

4500

870

pF

350

85 120

24

nC

22

15

40

40

80

ns

65 120

30

60

–65

A

–200

–1.1 –1.4 V

70

120

ns

7

9

A

0.245 0.54 mC

2

Siliconix

P-39628—Rev. A, 28-Dec-94

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