NDP708AE Просмотр технического описания (PDF) - Fairchild Semiconductor

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NDP708AE

N-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

Electrical Characteristics (TC = 25°C unless otherwise noted)

Symbol Parameter

Conditions

DRAIN-SOURCE AVALANCHE RATINGS (Note 1)

EAS

Single Pulse Drain-Source

VDD = 25 V, ID = 60 A

Avalanche Energy

IAR

Maximum Drain-Source Avalanche Current

Type Min Typ Max Units

NDP708AE

NDP708BE

NDB708AE

NDB708BE

600 mJ

60 A

OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown

VGS = 0 V, ID = 250 µA

ALL

80

V

Voltage

IDSS

Zero Gate Voltage Drain

Current

VDS = 80 V,

VGS = 0 V

ALL

TJ = 125°C

IGSSF

Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V

ALL

IGSSR

Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V

ALL

ON CHARACTERISTICS (Note 2)

250 µA

1 mA

100 nA

-100 nA

VGS(th)

Gate Threshold Voltage

RDS(ON)

Static Drain-Source

On-Resistance

ID(on)

On-State Drain Current

VDS = VGS,

ID = 250 µA

ALL

TJ = 125°C

2 2.6 4

V

1.4 1.9 3.6 V

VGS = 10 V,

ID = 30 A

TJ = 125°C

NDP708A

NDP708AE

NDB708A

NDB708AE

0.016 0.022 Ω

0.025 0.04 Ω

VGS = 10 V,

ID = 27 A

TJ = 125°C

NDP708B

NDP708BE

NDB708B

NDB708BE

0.25 Ω

0.044 Ω

VGS = 10 V, VDS = 10 V

NDP708A 60

A

NDP708AE

NDB708A

NDB708AE

NDP708B 54

A

NDP708BE

NDB708B

NDB708BE

gFS

Forward Transconductance

DYNAMIC CHARACTERISTICS

VDS = 10 V, ID = 30 A

ALL

16 33

S

Ciss

Input Capacitance

Coss

Output Capacitance

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

Crss

Reverse Transfer Capacitance

ALL

2800 3600 pF

ALL

780 1000 pF

ALL

285 400 pF

NDP708.SAM

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