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NDP708AE

N-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

May 1994

NDP708A / NDP708AE / NDP708B / NDP708BE

NDB708A / NDB708AE / NDB708B / NDB708BE

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

These N-channel enhancement mode power field

effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This

very high density process has been especially

tailored to minimize on-state resistance, provide

superior switching performance, and withstand high

energy pulses in the avalanche and commutation

modes. These devices are particularly suited for low

voltage applications such as automotive, DC/DC

converters, PWM motor controls, and other battery

powered circuits where fast switching, low in-line

power loss, and resistance to transients are needed.

60 and 54A, 80V. RDS(ON) = 0.022 and 0.025Ω.

Critical DC electrical parameters specified at

elevated temperature.

Rugged internal source-drain diode can eliminate

the need for an external Zener diode transient

suppressor.

175°C maximum junction temperature rating.

High density cell design (3 million/in²) for extremely

low RDS(ON).

TO-220 and TO-263 (D2PAK) package for both

through hole and surface mount applications.

_____________________________________________________________________

D

G

S

Absolute Maximum Ratings

Symbol Parameter

TC = 25°C unless otherwise noted

NDP708A NDP708AE

NDB708A NDB708AE

NDP708B NDP708BE

NDB708B NDB708BE

VDSS

Drain-Source Voltage

VDGR

Drain-Gate Voltage (RGS < 1 MΩ)

VGSS

Gate-Source Voltage - Continuous

- Nonrepetitive (tP < 50 µs)

ID

Drain Current - Continuous

- Pulsed

80

80

±20

±40

60

54

180

162

PD

Total Power Dissipation @ TC = 25°C

150

Derate above 25°C

1

TJ,TSTG

TL

Operating and Storage Temperature Range

Maximum lead temperature for soldering

purposes, 1/8" from case for 5 seconds

-65 to 175

275

Units

V

V

V

V

A

A

W

W/°C

°C

°C

© 1997 Fairchild Semiconductor Corporation

NDP708.SAM

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