NDP708AE Просмотр технического описания (PDF) - Fairchild Semiconductor
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NDP708AE Datasheet PDF : 6 Pages
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Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
Type Min Typ Max Units
SWITCHING CHARACTERISTICS (Note 2)
tD(ON)
Turn - On Delay Time
tr
Turn - On Rise Time
VDD = 40 V, ID = 60 A,
VGS = 10 V, RGEN = 5 Ω
tD(OFF)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS = 64 V,
ID = 60 A, VGS = 10 V
Qgd
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
ALL
15 25 nS
ALL
143 230 nS
ALL
58 90 nS
ALL
108 180 nS
ALL
94 130 nC
ALL
16
nC
ALL
51
nC
IS
Maximum Continuos Drain-Source Diode Forward Current
NDP708A
NDP708AE
NDB708A
NDB708AE
60 A
NDP708B
NDP708BE
NDB708B
NDB708BE
54 A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
NDP708A
NDP708AE
NDB708A
NDB708AE
180 A
NDP708B
NDP708BE
NDB708B
NDB708BE
162 A
VSD
Drain-Source Diode Forward VGS = 0 V,
(Note 2) Voltage
IS = 30 A
ALL
TJ = 125°C
trr
Irr
Reverse Recovery Time
Reverse Recovery Current
VGS = 0 V, IS = 60 A,
dIS/dt = 100 A/µs
ALL
ALL
THERMAL CHARACTERISTICS
0.91 1.3 V
0.82 1.2 V
98 140 ns
6.5 10 A
RθJC
Thermal Resistance, Junction-to-Case
ALL
RθJA
Thermal Resistance, Junction-to-Ambient
ALL
Notes:
1. NDP708A/708B and NDB708A/708B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
1 °C/W
62.5 °C/W
NDP708.SAM
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