NDP708AE Просмотр технического описания (PDF) - Fairchild Semiconductor

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NDP708AE

N-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

Typical Electrical Characteristics (continued)

1.15

I D = 250µA

1.1

1.05

1

0.95

0.9

-50 -25

0

25

50

75 100 125 150 175

TJ , JUNCTION TEMPERATURE (°C)

Figure 7. Breakdown Voltage

Variation with Temperature.

5000

3000

2000

C iss

1000

C oss

500

100

1

f = 1 MHz

V GS = 0V

C rss

2

3

5

10

20 30

50

VDS , DRAIN TO SOURCE VOLTAGE (V)

Figure 9. Capacitance Characteristics.

100

50 VGS = 0V

10

TJ = 125°C

2

25°C

1

0.1

-55°C

0.01

0.2

0.4

0.6

0.8

1

1.2

1.4

VSD , BODY DIODE FORWARD VOLTAGE (V)

Figure 8. Body Diode Forward Voltage

Variation with Current and

Temperature.

20

ID = 60A

15

VDS = 12V 24

64

10

5

0

0

40

80

120

160

Q g , GATE CHARGE (nC)

Figure 10. Gate Charge Characteristics.

VIN

VGS

RGEN

G

VDD

RL

D

V OUT

DUT

S

t d(on)

t on

tr

90%

t d(off)

toff

tf

90%

Output, Vout

Input, Vin

10%

10%

50%

10%

90% Inverted

50%

Pulse Width

Figure 11. Switching Test Circuit.

Figure 12. Switching Waveforms.

NDP708.SAM

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