BF1208 Просмотр технического описания (PDF) - Philips Electronics

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BF1208

Dual N-channel dual gate MOSFET

Philips Electronics 

Philips Semiconductors

BF1208

Dual N-channel dual gate MOSFET

8.2 Dynamic characteristics for amplifier B

Table 11: Dynamic characteristics for amplifier B [1]

Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 13 mA; unless otherwise specified.

Symbol Parameter

Conditions

Min Typ

|yfs|

Ciss(G1)

Ciss(G2)

Coss

Crss

Gtr

NF

Xmod

forward transfer admittance Tj = 25 °C

28

input capacitance at gate1 f = 1 MHz

-

input capacitance at gate2 f = 1 MHz

-

output capacitance

f = 1 MHz

-

reverse transfer capacitance f = 1 MHz

-

power gain

noise figure

cross-modulation

BS = BS(opt); BL = BL(opt)

f = 200 MHz; GS = 2 mS; GL = 0.5 mS

f = 400 MHz; GS = 2 mS; GL = 1 mS

f = 800 MHz; GS = 3.3 mS; GL = 1 mS

f = 11 MHz; GS = 20 mS; BS = 0 S

f = 400 MHz; YS = YS(opt)

f = 800 MHz; YS = YS(opt)

input level for k = 1 %; fw = 50 MHz; funw = 60 MHz

at 0 dB AGC

33

30

29

-

-

-

[2]

90

33

2.0

3.4

0.85

20

37

34

33

5

1.3

1.4

-

at 10 dB AGC

- 88

at 20 dB AGC

- 94

at 40 dB AGC

100 103

Max Unit

43 mS

2.5 pF

- pF

- pF

- fF

41 dB

38 dB

37 dB

- dB

1.9 dB

2.1 dB

- dBµV

- dBµV

- dBµV

- dBµV

[1] For the MOSFET not in use: VG1-S(A) = 0 V; VDS(A) = 0 V.

[2] Measured in Figure 34 test circuit.

9397 750 14254

Product data sheet

Rev. 01 — 16 March 2005

© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

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