BF1208 Просмотр технического описания (PDF) - Philips Electronics
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BF1208 Datasheet PDF : 22 Pages
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Philips Semiconductors
BF1208
Dual N-channel dual gate MOSFET
24
ID
(mA)
16
8
001aaa574
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
16
ID
(mA)
12
8
4
001aaa575
(1)
(2)
(3)
(4)
(5)
0
0
2
4
6
VGG = VDS (V)
0
0
2
4
6
VG2-S (V)
(1) RG1 = 68 kΩ.
(2) RG1 = 82 kΩ.
(3) RG1 = 100 kΩ.
(4) RG1 = 120 kΩ.
(5) RG1 = 150 kΩ.
(6) RG1 = 180 kΩ.
(7) RG1 = 220 kΩ.
(8) RG1 = 270 kΩ.
VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 °C;
RG1 is connected to VGG; see Figure 3.
Fig 23. Amplifier B: drain current as a function of gate1
supply voltage and drain supply voltage; typical
values
(1) VGG = 5.0 V.
(2) VGG = 4.5 V.
(3) VGG = 4.0 V.
(4) VGG = 3.5 V.
(5) VGG = 3.0 V.
VDS(B) = 5 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 °C;
RG1 = 150 kΩ (connected to VGG); see Figure 3.
Fig 24. Amplifier B: drain current as a function of gate2
voltage; typical values
9397 750 14254
Product data sheet
Rev. 01 — 16 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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