BF1208 Просмотр технического описания (PDF) - Philips Electronics
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BF1208 Datasheet PDF : 22 Pages
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Philips Semiconductors
BF1208
Dual N-channel dual gate MOSFET
8.2.2 Scattering parameters for amplifier B
Table 12: Scattering parameters for amplifier B
VDS(B) = 5 V; VG2-S = 4 V; ID(B) = 13 mA; VDS(A) = 0 V; VG1-S(A) = 0 V; Tamb = 25 °C; typical values.
f
(MHz)
s11
Magnitude
(ratio)
Angle
(deg)
s21
Magnitude
(ratio)
Angle
(deg)
s12
Magnitude
(ratio)
Angle
(deg)
s22
Magnitude
(ratio)
Angle
(deg)
50
0.985
−3.42 3.33
176.41 0.0010
87.55 0.988
−1.60
100 0.984
−6.96 3.31
172.70 0.0020
83.45 0.988
−3.16
200 0.980
−13.51 3.27
165.59 0.0039
82.84 0.987
−6.31
300 0.975
−20.07 3.23
158.42 0.0054
82.01 0.986
−9.40
400 0.969
−26.61 3.19
151.34 0.0068
79.73 0.984
−12.46
500 0.961
−32.89 3.14
144.33 0.0085
77.91 0.982
−15.57
600 0.955
−39.19 3.07
137.54 0.0100
76.31 0.980
−18.62
700 0.945
−45.39 3.00
130.72 0.0115
73.76 0.977
−21.70
800 0.938
−51.39 2.93
123.98 0.0131
71.58 0.974
−24.76
900 0.930
−57.36 2.85
117.31 0.0145
69.18 0.971
−27.81
1000 0.920
−63.10 2.77
110.39 0.0157
67.54 0.967
−30.86
8.2.3 Noise data for amplifier B
Table 13: Noise data for amplifier B
VDS(B) = 5 V; VG2-S = 4 V; ID(B) = 13 mA; VDS(A) = 0 V; VG1-S(A) = 0 V; Tamb = 25 °C; typical values;
unless otherwise specified.
f (MHz)
NFmin (dB)
Γopt
ratio
(deg)
rn (Ω)
400
1.3
0.695
13.11
0.694
800
1.4
0.674
32.77
0.674
9397 750 14254
Product data sheet
Rev. 01 — 16 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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