BF1208 Просмотр технического описания (PDF) - Philips Electronics
Номер в каталоге
Компоненты Описание
производитель
BF1208 Datasheet PDF : 22 Pages
| |||
Philips Semiconductors
9. Test information
BF1208
Dual N-channel dual gate MOSFET
RGEN
50 Ω
Vi
VAGC
VDS(A)
5V
4.7 nF
10 kΩ
4.7 nF
G1A
L1
2.2 µH
DA
4.7 nF
50 Ω
4.7 nF
4.7 nF
G2 BF1208 S
G1B
DB
50 Ω
RG1
L2
2.2 µH
4.7 nF
RL
50 Ω
VGG
0V
Fig 33. Cross-modulation test set-up for amplifier A
VDS(B)
5V
001aac201
VAGC
VDS(A)
5V
4.7 nF
10 kΩ
4.7 nF
G1A
L1
2.2 µH
DA
50 Ω
4.7 nF
G2 BF1208 S
4.7 nF
G1B
DB
4.7 nF
RGEN
50 Ω
Vi
50 Ω
RG1
VGG
5V
L2
2.2 µH
4.7 nF
RL
50 Ω
VDS(B)
5V
001aac202
Fig 34. Cross-modulation test set-up for amplifier B
9397 750 14254
Product data sheet
Rev. 01 — 16 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
18 of 22
Share Link: 