CLF1G0035-100 Просмотр технического описания (PDF) - NXP Semiconductors.

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CLF1G0035-100

Broadband RF power GaN HEMT

NXP Semiconductors. 

NXP Semiconductors

CLF1G0035-100; CLF1G0035S-100

Broadband RF power GaN HEMT

7.3 Graphical data

The following figures are measured in a broadband amplifier demo board circuit from

200 MHz to 2100 MHz.

7.3.1 1-Tone CW RF performance



*S

G%







DDD 

Ș'





*S

G%









*S

Ș'



 

*S





DDD 





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I 0+]



















3/ G%P

VDS = 50 V; IDq = 300 mA; PL = 100 W.

Fig 3. Power gain and drain efficiency as function of

frequency; typical values

VDS = 50 V; IDq = 300 mA.

(1) f = 300 MHz

(2) f = 1000 MHz

(3) f = 2000 MHz

Fig 4. Power gain and drain efficiency as function

output power; typical values

CLF1G0035-100_1G0035S-100

Objective data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 2 — 29 January 2013

© NXP B.V. 2013. All rights reserved.

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