NXP Semiconductors
CLF1G0035-100; CLF1G0035S-100
Broadband RF power GaN HEMT
7.3.3 2-Tone CW performance
,0'
G%F
DDD
,0'
G%F
DDD
3/3(3 :
VDS = 50 V; IDq = 300 mA; f = 1 MHz.
(1) f = 300 MHz
(2) f = 1000 MHz
(3) f = 2000 MHz
Fig 7.
Third-order intermodulation distortion as a
function of peak envelope power load power;
typical values
3/3(3 :
VDS = 50 V; IDq = 500 mA; f = 1 MHz.
(1) f = 300 MHz
(2) f = 1000 MHz
(3) f = 2000 MHz
Fig 8.
Third-order intermodulation distortion as a
function of peak envelope power load power;
typical values
CLF1G0035-100_1G0035S-100
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 January 2013
© NXP B.V. 2013. All rights reserved.
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