CLF1G0035-100 Просмотр технического описания (PDF) - NXP Semiconductors.

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производитель

CLF1G0035-100

Broadband RF power GaN HEMT

NXP Semiconductors. 

NXP Semiconductors

CLF1G0035-100; CLF1G0035S-100

Broadband RF power GaN HEMT



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VDS = 50 V; IDq = 500 mA; PL(PEP) = 20 W.

(1) f = 10 kHz

(2) f = 30 kHz

(3) f = 100 kHz

(4) f = 300 kHz

(5) f = 1 MHz

(6) f = 3 MHz

Fig 9. Third-order intermodulation distortion as a function of frequency and tone

spacing; typical values

7.4 Bias module

The bias module information for the GaN HEMT amplifier is described in application note

“AN11130”

8. Test information

8.1 Ruggedness in class-AB operation

The CLF1G0035-100 and CLF1G0035S-100 are capable of withstanding a load mismatch

corresponding to VSWR = 10 : 1 through all phases under the following conditions:

VDS = 50 V; PL = 100 W, f = 3000 MHz.

8.2 Load pull impedance information

The measured load pull impedances are shown below. Impedance reference plane

defined at device leads. Measurements performed with NXP test fixtures. Test

temperature set at 25 C with a pulsed CW signal; tp = 100 s;  = 10 %; RF performance

at VDS = 50 V; IDq = 330 mA.

CLF1G0035-100_1G0035S-100

Objective data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 2 — 29 January 2013

© NXP B.V. 2013. All rights reserved.

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