CLF1G0035-100 Просмотр технического описания (PDF) - NXP Semiconductors.
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CLF1G0035-100 Datasheet PDF : 20 Pages
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NXP Semiconductors
CLF1G0035-100; CLF1G0035S-100
Broadband RF power GaN HEMT
7.2 Application test results
Table 10. CW and pulsed RF application information
Typical RF performance at Tcase = 25 C; IDq = 300 mA; VDS = 50 V in a class-AB broadband demo
board.
Test signal
f
(MHz)
PL
Gp
D
(W)
(dB)
(%)
1-Tone CW
500
100
14.2
61.6
1000
100
11.2
47.9
1500
100
10.8
46.4
2000
100
11.7
53.3
1-Tone pulsed [1]
500
100
15.5
67.4
1000
100
14
52.9
1500
100
14.3
53.7
2000
100
13.9
59.5
[1] Pulsed RF; tp = 50 s; = 1 %.
Table 11. 2-Tone CW application information
Typical 2-Tone performance at Tcase = 25 C; IDq = 500 mA; VDS = 50 V in a class-AB broadband
demo board.
Test signal
f
(MHz)
PL(PEP)
(W)
IMD3
(dBc)
2-Tone CW [1]
300
20
45.5
1000
20
39.3
1500
20
44
2000
20
46.4
[1] 2-Tone CW; f = 1 MHz.
CLF1G0035-100_1G0035S-100
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 January 2013
© NXP B.V. 2013. All rights reserved.
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