CLF1G0035-100 Просмотр технического описания (PDF) - NXP Semiconductors.
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CLF1G0035-100 Datasheet PDF : 20 Pages
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NXP Semiconductors
CLF1G0035-100; CLF1G0035S-100
Broadband RF power GaN HEMT
4. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
drain-source voltage
VGS
gate-source voltage
IGF
forward gate current
external RG = 5
Tstg
storage temperature
Tj
junction temperature
measured via IR scan
Min Max Unit
-
150 V
8 +3 V
-
36 mA
65 +150 C
-
250 C
5. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter
Rth(j-c) thermal resistance from junction to case
Conditions
Tj = 200 C
Typ
[1] 1.02
[1] Tj is measured via IR scan with case temperature of 85 C and power dissipation of 113 W.
Unit
K/W
6. Characteristics
Table 7. DC Characteristics
Tcase = 25 C; unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown
voltage
VGS = 7 V; IDS = 24 mA
VGS(th) gate-source threshold voltage VDS = 0.1 V; IDS = 24 mA
IDSX
drain cut-off current
VDS = 10 V; VGS = 3 V
gfs
forward transconductance
VDS = 10 V; VGS = 0 V
Min Typ
150 -
2.4 2
-
17
-
3.9
Max
-
1.3
-
-
Unit
V
V
A
S
Table 8. RF Characteristics
Test signal: pulsed RF; tp = 100 s; = 10 %; RF performance at VDS = 50 V; IDq = 330 mA;
Tcase = 25 C; unless otherwise specified in a class-AB production circuit.
Symbol Parameter
Conditions
Min Typ Max Unit
f
frequency
3
-
3.5 GHz
D
Gp
RLin
Pdroop(pulse)
tr
tf
drain efficiency
power gain
input return loss
pulse droop power
rise time
fall time
PL = 100 W
PL = 100 W
PL = 100 W
PL = 100 W
PL = 100 W
PL = 100 W
-
47
-
%
-
10
-
dB
-
6
-
dB
-
0.04 -
dB
-
5
-
ns
-
5
-
ns
CLF1G0035-100_1G0035S-100
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 January 2013
© NXP B.V. 2013. All rights reserved.
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