FGA15N120ANTDTU_F109 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FGA15N120ANTDTU_F109 Datasheet PDF : 9 Pages
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Package Marking and Ordering Information
Part Number
Top Mark Package
FGA15N120ANTDTU_F109 FGA15N120ANTDTU TO-3P
Packing
Method
Tube
Reel Size Tape Width Quantity
N/A
N/A
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Off Characteristics
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
IC = 15 mA, VCE = VGE
IC = 15 A, VGE = 15 V
IC = 15 A, VGE = 15 V,
TC = 125C
IC = 30 A, VGE = 15 V
VCE = 30 V, VGE = 0 V,
f = 1 MHz
VCC = 600 V, IC = 15 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 25C
VCC = 600 V, IC = 15 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 125C
VCE = 600 V, IC = 15 A,
VGE = 15 V
--
--
3
mA
--
--
± 250
nA
4.5
6.5
8.5
V
--
1.9
2.4
V
--
2.2
--
V
--
2.3
--
V
--
2650
--
pF
--
143
--
pF
--
96
--
pF
--
15
--
ns
--
20
--
ns
--
160
--
ns
--
100
180
ns
--
3
4.5
mJ
--
0.6
0.9
mJ
--
3.6
5.4
mJ
--
15
--
ns
--
20
--
ns
--
170
--
ns
--
150
--
ns
--
3.2
4.8
mJ
--
0.8
1.2
mJ
--
4.0
6.0
mJ
--
120
180
nC
--
16
22
nC
--
50
65
nC
©2006 Fairchild Semiconductor Corporation
2
FGA15N120ANTDTU Rev. C1
www.fairchildsemi.com
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