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FGA15N120ANTDTU_F109 Просмотр технического описания (PDF) - Fairchild Semiconductor
Номер в каталоге
Компоненты Описание
производитель
FGA15N120ANTDTU_F109
1200 V, 15 A NPT Trench IGBT
Fairchild Semiconductor
FGA15N120ANTDTU_F109 Datasheet PDF : 9 Pages
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Typical Performance Characteristics
(Continued)
Figure 17. Forward Characteristics
50
10
T = 125
o
C
J
1
T = 25
o
C
J
Figure 18. Reverse Recovery Current
30
di
F
/dt = 200A/
s
25
20
15
di
F
/dt = 100A/
s
10
T = 125
o
C
C
T = 25
o
C
C
0.1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
Forward Voltage , V [V]
F
Figure 19. Stored Charge
7000
6000
di
F
/dt = 200A/
s
5000
4000
di
F
/dt = 100A/
s
3000
2000
1000
0
5
10
15
20
25
Forward Current , I [A]
F
5
0
5
10
15
20
25
Forward Current , I [A]
F
Figure 20. Reverse Recovery Time
400
di
F
/dt = 100A/
s
300
200
di
F
/dt = 200A/
s
100
0
5
10
15
20
25
Forward Current , I [A]
F
©2006 Fairchild Semiconductor Corporation
7
FGA15N120ANTDTU Rev. C1
www.fairchildsemi.com
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