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FGA15N120ANTDTU_F109 Просмотр технического описания (PDF) - Fairchild Semiconductor
Номер в каталоге
Компоненты Описание
производитель
FGA15N120ANTDTU_F109
1200 V, 15 A NPT Trench IGBT
Fairchild Semiconductor
FGA15N120ANTDTU_F109 Datasheet PDF : 9 Pages
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Electrical Characteristics of DIODE
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
V
FM
Diode Forward Voltage
I
F
= 15 A
T
C
= 25
C
T
C
= 125
C
t
rr
Diode Reverse Recovery Time
I
F
= 15 A
T
C
= 25
C
di
F
/dt = 200 A/
s
T
C
= 125
C
I
rr
Diode Peak Reverse Recovery Cur-
rent
T
C
= 25
C
T
C
= 125
C
Q
rr
Diode Reverse Recovery Charge
T
C
= 25
C
T
C
= 125
C
Min.
--
--
--
--
--
--
--
--
Typ.
1.7
1.8
210
280
27
31
2835
4340
Max.
2.7
--
330
--
40
--
6600
--
Unit
V
ns
A
nC
©2006 Fairchild Semiconductor Corporation
3
FGA15N120ANTDTU Rev. C1
www.fairchildsemi.com
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