BSH207 Просмотр технического описания (PDF) - NXP Semiconductors.
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производитель
BSH207 Datasheet PDF : 8 Pages
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Philips Semiconductors
P-channel enhancement mode
MOS transistor
Product specification
BSH205
Gate-source voltage, VGS (V)
-6
VDD = 10 V
-5 RD = 20 Ohms
Tj = 25 C
-4
BSH205
-3
-2
-1
0
0
1
2
3
4
5
Gate charge, (nC)
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG)
Source-Drain Diode Current, IF (A)
5
BSH205
4.5
4
3.5
3
2.5
2
150 C
Tj = 25 C
1.5
1
0.5
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Drain-Source Voltage, VSDS (V)
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
August 1998
5
Rev 1.000
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