BSH207 Просмотр технического описания (PDF) - NXP Semiconductors.

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Компоненты Описание

производитель

BSH207

P-channel enhancement mode MOS transistor

NXP Semiconductors. 

Philips Semiconductors

P-channel enhancement mode

MOS transistor

Product specification

BSH205

Drain Current, ID (A)

-3

VDS > ID X RDS(on)

-2.5

-2

Tj = 25 C

BSH205

150 C

-1.5

-1

-0.5

0

0

-0.5

-1

-1.5

-2

-2.5

-3

Gate-Source Voltage, VGS (V)

Fig.7. Typical transfer characteristics.

ID = f(VGS)

Transconductance, gfs (S)

3.5

VDS > ID X RDS(on)

3

2.5

Tj = 25 C

BSH205

150 C

2

1.5

1

0.5

0

0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -2.2 -2.4 -2.6

Drain Current, ID (A)

Fig.8. Typical transconductance, Tj = 25 ˚C.

gfs = f(ID)

Normalised Drain-Source On Resistance

2

1.9 RDS(ON) @ Tj

1.8

1.7

RDS(ON) @ 25C

1.6

1.5

VGS = -4.5 V

1.4

1.3

1.2

1.1

1

0.9

0.8

0.7

0.6

0.5

-2.5 V

-1.8 V

0

25

50

75

100

125

150

Junction Temperature, Tj (C)

Fig.9. Normalised drain-source on-state resistance.

RDS(ON)/RDS(ON)25 ˚C = f(Tj)

Threshold Voltage, VGS(to), (V)

0.7

0.6

0.5

typical

0.4

minimum

0.3

0.2

0.1

0

0

25

50

75

100

125

150

Junction Temperature, Tj (C)

Fig.10. Gate threshold voltage.

VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

Drain Current, ID (A)

1E-01

1E-02

BSH205

VDS = -5 V

Tj = 25 C

1E-03

1E-04

1E-05

1E-06

1E-07

-1 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0

Gate-Source Voltage, VGS (V)

Fig.11. Sub-threshold drain current.

ID = f(VGS); conditions: Tj = 25 ˚C

Capacitances, Ciss, Coss, Crss (pF)

1000

BSH205

Ciss

100

Coss

Crss

10

-0.1

-1.0

-10.0

Drain-Source Voltage, VDS (V)

-100.0

Fig.12. Typical capacitances, Ciss, Coss, Crss.

C = f(VDS); conditions: VGS = 0 V; f = 1 MHz

August 1998

4

Rev 1.000

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