BSH207 Просмотр технического описания (PDF) - NXP Semiconductors.
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BSH207 Datasheet PDF : 8 Pages
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Philips Semiconductors
P-channel enhancement mode
MOS transistor
Product specification
BSH205
Normalised Power Dissipation, PD (%)
120
100
80
60
40
20
0
0
25
50
75
100
125
150
Ambient Temperature, Ta (C)
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Ta)
Normalised Drain Current, ID (%)
120
100
80
60
40
20
0
0
25
50
75
100
125
150
Ambient Temperature, Ta (C)
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Ta); conditions: VGS ≤ -10 V
Peak Pulsed Drain Current, IDM (A)
100
BSH205
10
RDS(on) = VDS/ ID
1
0.1
d.c.
tp = 100 us
1 ms
10 ms
100 ms
0.01
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Fig.3. Safe operating area. Ta = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Peak Pulsed Drain Current, IDM (A)
1000
BSH105
D = 0.5
100
0.2
0.1
0.05
10 0.02
single pulse
1
PD tp D = tp/T
0.1
1E-06
1E-05
T
1E-04 1E-03 1E-02 1E-01 1E+00 1E+01
Pulse width, tp (s)
Fig.4. Transient thermal impedance.
Zth j-a = f(t); parameter D = tp/T
Drain current, ID (A)
-1.4
4.5 V -2.5 V
-1.8 V
-1.2
-1
-0.8
-0.6
-0.4
-0.2
BSH205
Tj = 25 C
VGS = -1.4 V
-1.3 V
-1.2 V
-1.1 V
-1 V
-0.9 V
0
0
-0.5
-1
-1.5
-2
Drain-Source Voltage, VDS (V)
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
Drain-Source On Resistance, RDS(on) (Ohms) BSH205
3
2.8
-0.9 V
-1V
-1.2 V
Tj = 25 C
2.6
-1.1 V
-1.3 V
2.4
2.2
2
-1.4 V
1.8
1.6
1.4
1.2
1
0.8
-2.5 V
-1.8 V
0.6
0.4
0.2
VGS = -4.5V
0
0
-0.2 -0.4 -0.6 -0.8
-1
-1.2 -1.4
Drain Current, ID (A)
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
August 1998
3
Rev 1.000
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