BB501M Просмотр технического описания (PDF) - Renesas Electronics
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BB501M Datasheet PDF : 11 Pages
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BB501M
Maximum Channel Power
Dissipation Curve
200
150
100
50
0
50
100
150
200
Ambient Temperature Ta (°C)
Drain Current vs. Gate1 Voltage
20
VD = 5 V
RG = 33 kΩ
16
12
4V
3V
8
2V
4
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage VG1 (V)
Drain Current vs. Gate1 Voltage
20
VDS = 5 V
RG = 68 kΩ
16
12
8
3V 4V
4
2V
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage VG1 (V)
Rev.6.00 Aug 10, 2005 page 5 of 10
Typical Output Characteristics
20
VG2S = 4 V
VG1 = VDS
16
12
8
4
R
=
G
222k37Ω368354k82976kΩΩkkkkkΩΩΩΩΩ
100 kΩ
0
1
2
3
4
5
Drain to Source Voltage VDS (V)
Drain Current vs. Gate1 Voltage
20
VDS = 5 V
RG = 47 kΩ
16
12
3V 4V
8
2V
4
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage VG1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
VDS = 5 V
RG = 33 kΩ
24 f = 1 kHz
4V
3V
18
2V
12
6
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage VG1 (V)
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