BB501M Просмотр технического описания (PDF) - Renesas Electronics

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BB501M

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Renesas Electronics 

BB501M

Built in Biasing Circuit MOS FET IC

UHF RF Amplifier

REJ03G0831-0600

(Previous ADE-208-700D)

Rev.6.00

Aug.10.2005

Features

• Built in Biasing Circuit; To reduce using parts cost & PC board space.

• High gain;

PG = 21.5 dB typ. at f = 900 MHz

• Low noise;

NF = 1.85 dB typ. at f = 900 MHz

• Withstanding to ESD;

Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

• Provide mini mold packages; MPAK-4(SOT-143Rmod)

Outline

Notes:

RENESAS Package code: PLSP0004ZA-A

(Package name: MPAK-4)

2

3

1

4

1. Marking is “AS –”.

2. BB501M is individual type number of RENESAS BBFET.

1. Source

2. Gate1

3. Gate2

4. Drain

Rev.6.00 Aug 10, 2005 page 1 of 10

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