BB501M Просмотр технического описания (PDF) - Renesas Electronics

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производитель

BB501M

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Renesas Electronics 

BB501M

Main Characteristics

Test Circuit for Operating Items (ID(op) , |yfs|, Ciss, Coss, Crss, NF, PG)

VG2

Gate 2

RG

VG1

Gate 1

Drain

A

ID

Source

Application Circuit

VAGC = 4 to 0.3 V

BBFET

VDS = 5 V

RFC

Output

Input

RG

VGG = 5 V

Rev.6.00 Aug 10, 2005 page 3 of 10

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