BB501M Просмотр технического описания (PDF) - Renesas Electronics

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Компоненты Описание

производитель

BB501M

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Renesas Electronics 

BB501M

900MHz Power Gain, Noise Figure Test Circuit

VG1 VG2

VDS

C4

C5

C6

Input

R1

R2

C3

G2

G1

L1 L2

R3

RFC

D

Output

L3 L4

S

C1

C2

C1, C2 :

C3 :

C4 to C6 :

R1 :

R2 :

R3 :

Variable Capacitor (10pF MAX)

Disk Capacitor (1000pF)

Air Capacitor (1000pF)

47 kΩ

47 kΩ

4.7 kΩ

L1 :

10

21

L3 :

29

L2 :

26

L4 :

18

(φ1mm Copper wire)

Unit : mm

RFC : φ1mm Copper wire with enamel 4turns inside dia 6mm

Rev.6.00 Aug 10, 2005 page 4 of 10

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