BF545A Просмотр технического описания (PDF) - Philips Electronics

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производитель

BF545A

N-channel silicon junction field-effect transistors

Philips Electronics 

Philips Semiconductors

N-channel silicon junction

field-effect transistors

Product specification

BF545A; BF545B; BF545C

handbIoDok1, 0ha3lfpage

(µA)

102

10

1

10−1

10−2

10−3

−3

−2

MBB461

−1

0

VGS (V)

VDS = 15 V; Tj = 25 °C.

Fig.13 Drain current as a function of gate-source

voltage; typical values for BF545A.

103

handbIoDok, halfpage

(µA)

102

10

1

10−1

10−2

10−3

−6

−4

MBB458

−2

0

VGS (V)

VDS = 15 V; Tj = 25 °C.

Fig.14 Drain current as a function of gate-source

voltage; typical values for BF545B.

handbIoDok1, 0ha3lfpage

(µA)

102

MBB455

10

1

10−1

10−2

10−3

−8

−6

−4

−2

0

VGS (V)

−102

handbook, halfpage

IG

(pA)

−10

−1

IGSS

−10−1

−10−2

0

MBB454

ID = 10 mA

1 mA

0.1 mA

10

VDG (V)

20

VDS = 15 V; Tj = 25 °C.

Fig.15 Drain current as a function of gate-source

voltage; typical values for BF545C.

ID = 10 mA only for BF545B and BF545C; Tj = 25 °C.

Fig.16 Gate current as a function of drain-gate

voltage; typical values.

1996 Jul 29

8

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