BF545A Просмотр технического описания (PDF) - Philips Electronics
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BF545A Datasheet PDF : 12 Pages
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Philips Semiconductors
N-channel silicon junction
field-effect transistors
Product specification
BF545A; BF545B; BF545C
FEATURES
• Low leakage level (typ. 500 fA)
• High gain
• Low cut-off voltage (max. 2.2 V for BF545A).
APPLICATIONS
• Impedance converters in e.g. electret microphones and
infra-red detectors
• VHF amplifiers in oscillators and mixers.
handbook, halfpa2ge
1
d
g
s
DESCRIPTION
N-channel symmetrical silicon junction field-effect
transistors in a SOT23 package.
3
Top view
MAM036
PINNING - SOT23
PIN
SYMBOL
1
s
2
d
3
g
DESCRIPTION
source
drain
gate
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
VGSoff
IDSS
drain-source voltage
gate-source cut-off voltage
drain current
BF545A
BF545B
BF545C
Ptot
yfs
total power dissipation
forward transfer admittance
Marking codes:
BF545A: M65.
BF545B: M66.
BF545C: M67.
Fig.1 Simplified outline and symbol.
CONDITIONS
ID = 1 µA; VDS = 15 V
VGS = 0; VDS = 15 V
up to Tamb = 25 °C
VGS = 0; VDS = 15 V
MIN.
−
−0.4
MAX.
±30
−7.8
UNIT
V
V
2
6.5
mA
6
15
mA
12
25
mA
−
250
mW
3
6.5
mS
1996 Jul 29
2
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