BF545A Просмотр технического описания (PDF) - Philips Electronics
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BF545A Datasheet PDF : 12 Pages
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Philips Semiconductors
N-channel silicon junction
field-effect transistors
Product specification
BF545A; BF545B; BF545C
DYNAMIC CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Cis
input capacitance
VDS = 15 V; VGS = −10 V; f = 1 MHz
VDS = 15 V; VGS = 0; f = 1 MHz
Crs
reverse transfer capacitance
VDS = 15 V; VGS = −10 V; f = 1 MHz
VDS = 15 V; VGS = 0; f = 1 MHz
gis
common source input conductance VDS = 10 V; ID = 1 mA; f = 100 MHz
VDS = 10 V; ID = 1 mA; f = 450 MHz
gfs
common source transfer
conductance
VDS = 10 V; ID = 1 mA; f = 100 MHz
VDS = 10 V; ID = 1 mA; f = 450 MHz
grs
common source reverse
conductance
VDS = 10 V; ID = 1 mA; f = 100 MHz
VDS = 10 V; ID = 1 mA; f = 450 MHz
gos
common source output
conductance
VDS = 10 V; ID = 1 mA; f = 100 MHz
VDS = 10 V; ID = 1 mA; f = 450 MHz
TYP.
1.7
3
0.8
0.9
15
300
2
1.8
−6
−40
30
60
UNIT
pF
pF
pF
pF
µS
µS
mS
mS
µS
µS
µS
µS
30
handbook, halfpage
IDSS
(mA)
20
10
MBB467
6
handbook, halfpage
Yfs
(mS)
5
MBB466
0
0
−2
−4
−6
−8
VGSoff (V)
VDS = 15 V; Tj = 25 °C.
Fig.3 Drain current as a function of gate-source
cut-off voltage; typical values.
4
0
−2
−4
−6
−8
VGSoff (V)
VDS = 15 V; VGS = 0; Tj = 25 °C.
Fig.4 Forward transfer admittance as a
function of gate-source cut-off voltage;
typical values.
1996 Jul 29
5
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