BF545A Просмотр технического описания (PDF) - Philips Electronics

Номер в каталоге

Компоненты Описание

производитель

BF545A

N-channel silicon junction field-effect transistors

Philips Electronics 

Philips Semiconductors

N-channel silicon junction

field-effect transistors

Product specification

BF545A; BF545B; BF545C

80

handbook, halfpage

Yos

(µS)

40

MBB465

300

handbook, halfpage

RDSon

(Ω)

200

100

MBB464

0

0

−2

−4

−6

−8

VGSoff (V)

VDS = 15 V; VGS = 0; Tj = 25 °C.

Fig.5 Common-source output admittance as a

function of gate-source cut-off voltage;

typical values.

0

0

−2

−4

−6

−8

VGSoff (V)

VDS = 100 mV; VGS = 0; Tj = 25 °C.

Fig.6 Drain-source on-resistance as a

function of gate-source cut-off voltage;

typical values.

handbook, h6alfpage

ID

(mA)

4

2

0

0

4

MBB462

VGS = 0 V

−0.5 V

−1.0 V

8

12 VDS (V) 16

handbook, h6alfpage

ID

(mA)

4

MBB463

2

0

−3

−2

−1 VGS (V) 0

Tj = 25 °C.

Fig.7 Typical output characteristics; BF545A.

1996 Jul 29

VDS = 15 V; Tj = 25 °C.

Fig.8 Typical input characteristics; BF545A.

6

Share Link: