BF545A Просмотр технического описания (PDF) - Philips Electronics
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BF545A Datasheet PDF : 12 Pages
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Philips Semiconductors
N-channel silicon junction
field-effect transistors
Product specification
BF545A; BF545B; BF545C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient; note 1
500
K/W
Note
1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm2.
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)GSS
VGSoff
IDSS
IGSS
yfs
yos
gate-source breakdown voltage IG = −1 µA; VDS = 0
gate-source cut-off voltage
ID = 200 µA; VDS = 15 V
BF545A
BF545B
BF545C
drain current
BF545A
ID = 1 µA; VDS = 15 V
VGS = 0; VDS = 15 V
BF545B
BF545C
gate leakage current
forward transfer admittance
common source output
admittance
VGS = −20 V; VDS = 0
VGS = −20 V; VDS = 0;
Tj = 125 °C
VGS = 0; VDS = 15 V
VGS = 0; VDS = 15 V
MIN.
−30
−0.4
−1.6
−3.2
−0.4
2
6
12
−
−
3
−
TYP.
−
−
−
−
−
−
−
−
−0.5
−
−
40
MAX.
−
−2.2
−3.8
−7.8
−7.5
6.5
15
25
−1 000
−100
6.5
−
UNIT
V
V
V
V
V
mA
mA
mA
pA
nA
mS
µS
1996 Jul 29
4
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