BF545A Просмотр технического описания (PDF) - Philips Electronics

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производитель

BF545A

N-channel silicon junction field-effect transistors

Philips Electronics 

Philips Semiconductors

N-channel silicon junction

field-effect transistors

Product specification

BF545A; BF545B; BF545C

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

VDS

VGSO

VGDO

IG

Ptot

Tstg

Tj

PARAMETER

drain-source voltage

gate-source voltage

gate-drain voltage (DC)

forward gate current (DC)

total power dissipation

storage temperature

operating junction temperature

CONDITIONS

open drain

open source

up to Tamb = 25 °C; note 1

MIN.

−

−

−

−

−

−65

−

MAX.

±30

−30

−30

10

250

150

150

UNIT

V

V

V

mA

mW

°C

°C

Note

1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain

lead 10 mm2.

400

handbook, halfpage

Ptot

(mW)

300

MBB688

200

100

0

0

50

100

150

200

Tamb (°C)

Fig.2 Power derating curve.

1996 Jul 29

3

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