FDS3912 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDS3912 Datasheet PDF : 6 Pages
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Typical Characteristics
20
VGS = 10V
5.0V
4.5V
16
12
4.0V
8
4
3.5V
0
0
2
4
6
8
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2.2
2
ID = 3A
VGS = 10V
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 -25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
20
VDS = 10V
16
12
8
TA = 125oC
25oC
4
-55oC
0
2
2.5
3
3.5
4
4.5
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
1.8
1.6
VGS = 4.0V
1.4
4.5V
1.2
5.0V
6.0V
10V
1
0.8
0
4
8
12
16
20
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.3
0.25
0.2
TA = 125oC
ID = 1.5A
0.15
0.1
TA = 25oC
0.05
3
4
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
TA = 125oC
25oC
0.01
0.001
-55oC
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS3912 Rev C2(W)
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