FDS3912 Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталоге

Компоненты Описание

производитель

FDS3912

100V Dual N-Channel PowerTrench® MOSFET

Fairchild Semiconductor 

Drain–Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain–Source Diode Forward Current

VSD

Drain–Source Diode Forward

VGS = 0 V, IS = 1.3 A (Note 2)

Voltage

trr

Diode Reverse Recovery Time

IF = 3A

Qrr

Diode Reverse Recovery Charge diF/dt = 100 A/µs

(Note 2)

1.3

A

0.76 1.2

V

30

nS

106

nC

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 78°C/W when

mounted on a

0.5in2 pad of 2

oz copper

b) 125°C/W when

mounted on a

0.02 in2 pad of

2 oz copper

c) 135°C/W when

mounted on a

minimum pad.

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDS3912 Rev C2(W)

Share Link: