FDS3912 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDS3912 Datasheet PDF : 6 Pages
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October 2001
FDS3912
100V Dual N-Channel PowerTrench® MOSFET
General Description
These N-Channel MOSFETs have been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications. The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
Features
• 3 A, 100 V.
RDS(ON) = 125 mΩ @ VGS = 10 V
RDS(ON) = 135 mΩ @ VGS = 6 V
• Fast switching speed
• Low gate charge (14 nC typ)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
5
4
6
Q1
3
7
2
8
Q2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS3912
FDS3912
13’’
©2001 Fairchild Semiconductor Corporation
Ratings
100
±20
3
20
2
1.6
1.0
0.9
–55 to +175
78
40
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
FDS3912 Rev C2(W)
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