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LTC1983ES6-3

100mA Regulated Charge-Pump Inverters in ThinSOT

Linear Technology 

LTC1983-3/LTC1983-5

PI FU CTIO S

VIN (Pin 1): Charge Pump Input Voltage. May be between

2.3V and 5.5V. VIN should be bypassed with a ≥4.7µF low

ESR capacitor as close as possible to the pin for best

performance.

VOUT (Pin 2): Regulated Output Voltage for the IC. VOUT

should be bypassed with a ≥4.7µF low ESR capacitor as

close as possible to the pin for best performance.

C+ (Pin 3): Charge Pump Flying Capacitor Positive Termi-

nal. This node is switched between VIN and GND (It is

connected to VCC during shutdown).

C– (Pin 4): Charge Pump Flying Capacitor Negative Termi-

nal. This node is switched between GND and VOUT (It is

connected to GND during shutdown).

GND (Pin 5): Signal and Power Ground for the 6-Pin

SOT-23 package. This pin should be tied to a ground plane

for best performance.

SHDN (Pin 6): Shutdown. Grounding this pin shuts down

the IC. Tie to VIN to enable. This pin should not be pulled

above the VIN voltage or below GND.

BLOCK DIAGRA

LTC1983-X

C+

CFLY

1µF

C–

VOUT

COUT

10µF

S1A

S2A

CLOCK1

S1B

CONTROL

LOGIC

CLOCK2

S2B

CHARGE PUMP

COMP1

1µA

VIN

CIN

10µF

VREF

SHDN

1983 BD

1983fa

5

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