DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

CY7C1328G Просмотр технического описания (PDF) - Cypress Semiconductor

Номер в каталоге
Компоненты Описание
производитель
CY7C1328G
Cypress
Cypress Semiconductor Cypress
CY7C1328G Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
CY7C1328G
Truth Table [2, 3, 4, 5, 6]
Operation
Address
Used CE1 CE2 CE3 ZZ ADSP ADSC ADV WRITE OE CLK
DQ
Deselected Cycle, Power Down None H X X L
X
L
X
X
X L-H Tri-State
Deselected Cycle, Power Down None L L X L
L
X
X
X
X L-H Tri-State
Deselected Cycle, Power Down None L X H L
L
X
X
X
X L-H Tri-State
Deselected Cycle, Power Down None L L X L
H
L
X
X
X L-H Tri-State
Deselected Cycle, Power Down None L X H L
H
L
X
X
X L-H Tri-State
ZZ Mode, Power-Down
None X X X H X
X
X
X
X X Tri-State
Read Cycle, Begin Burst
External L H L L
L
X
X
X
L L-H
Q
Read Cycle, Begin Burst
External L H L L
L
X
X
X
H L-H Tri-State
Write Cycle, Begin Burst
External L H L L
H
L
X
L
X L-H
D
Read Cycle, Begin Burst
External L H L L
H
L
X
H
L L-H
Q
Read Cycle, Begin Burst
External L H L L
H
L
X
H
H L-H Tri-State
Read Cycle, Continue Burst
Next X X X L
H
H
L
H
L L-H
Q
Read Cycle, Continue Burst
Next X X X L
H
H
L
H
H L-H Tri-State
Read Cycle, Continue Burst
Next H X X L
X
H
L
H
L L-H
Q
Read Cycle, Continue Burst
Next H X X L
X
H
L
H
H L-H Tri-State
Write Cycle, Continue Burst
Next X X X L
H
H
L
L
X L-H
D
Write Cycle, Continue Burst
Next H X X L
X
H
L
L
X L-H
D
Read Cycle, Suspend Burst
Current X X X L
H
H
H
H
L L-H
Q
Read Cycle, Suspend Burst
Current X X X L
H
H
H
H
H L-H Tri-State
Read Cycle, Suspend Burst
Current H X X L
X
H
H
H
L L-H
Q
Read Cycle, Suspend Burst
Current H X X L
X
H
H
H
H L-H Tri-State
Write Cycle, Suspend Burst
Current X X X L
H
H
H
L
X L-H
D
Write Cycle, Suspend Burst
Current H X X L
X
H
H
L
X L-H
D
Truth Table for Read/Write[2]
Function
Read
Read
Write byte A - (DQA and DQPA)
Write byte B - (DQB and DQPB)
Write all bytes
Write all bytes
GW
BWE
BWA
BWB
H
H
X
X
H
L
H
H
H
L
L
H
H
L
H
L
H
L
L
L
L
X
X
X
Notes:
2. X = “Don't Care.” H = Logic HIGH, L = Logic LOW.
3. WRITE = L when any one or more Byte Write enable signals (BWA, BWB) and BWE = L or GW = L. WRITE = H when all Byte write enable signals (BWA, BWB),
BWE, GW = H.
4. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
5. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BWX. Writes may occur only on subsequent clocks
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to tri-state. OE is a
don't care for the remainder of the write cycle.
6. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tri-state when OE is
inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).
Document #: 38-05523 Rev. *E
Page 7 of 16
[+] Feedback

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]