BF1218 Просмотр технического описания (PDF) - NXP Semiconductors.

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BF1218

Dual N-channel dual gate MOSFET

NXP Semiconductors. 

NXP Semiconductors

BF1218

Dual N-channel dual gate MOSFET

8.2 Dynamic characteristics for amplifier B

Table 11. Dynamic characteristics for amplifier B[1]

Common source; Tamb = 25 C; VG2-S = 4 V; VDS = 5 V; ID = 15 mA; unless otherwise specified.

Symbol Parameter

Conditions

Min Typ

yfs

Ciss(G1)

Ciss(G2)

Coss

Crss

Gtr

NF

Xmod

forward transfer admittance f = 100 MHz; Tj = 25 C

input capacitance at gate1 f = 100 MHz

input capacitance at gate2 f = 100 MHz

output capacitance

f = 100 MHz

reverse transfer capacitance f = 100 MHz

transducer power gain

noise figure

cross modulation

BS = BS(opt); BL = BL(opt)

f = 200 MHz; GS = 2 mS; GL = 0.5 mS

f = 400 MHz; GS = 2 mS; GL = 1 mS

f = 800 MHz; GS = 3.3 mS; GL = 1 mS

f = 11 MHz; GS = 20 mS; BS = 0 S

f = 400 MHz; YS = YS(opt)

f = 800 MHz; YS = YS(opt)

input level for k = 1 %; fw = 50 MHz;

funw = 60 MHz

at 0 dB AGC

25

[2] -

[2] -

[2] -

[2] -

30

2.1

3.4

0.85

20

31 35

28 32

26 30

-3

- 1.1

- 1.4

[3]

90 -

at 10 dB AGC

- 90

at 20 dB AGC

- 98

at 40 dB AGC

102 105

Max Unit

40 mS

2.6 pF

- pF

- pF

- fF

39 dB

36 dB

34 dB

- dB

1.7 dB

2.0 dB

- dBV

- dBV

- dBV

- dBV

[1] For the MOSFET not in use: VG1-S(A) = 0 V; VDS(A) = 0 V.

[2] Calculated from S-parameters.

[3] Measured in Figure 34 test circuit.

BF1218_1

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 01 — 14 April 2010

© NXP B.V. 2010. All rights reserved.

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