BF1218 Просмотр технического описания (PDF) - NXP Semiconductors.
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BF1218 Datasheet PDF : 23 Pages
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NXP Semiconductors
BF1218
Dual N-channel dual gate MOSFET
100
IG1
(μA)
80
60
001aag363
(1)
(2)
(3)
40
(4)
20
0
0
(5)
(6)
(7)
0.4
0.8
1.2
1.6
2.0
VG1-S (V)
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1 V.
VDS(B) = 5 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 C.
Fig 19. Amplifier B: gate1 current as a function of
gate1 voltage; typical values
20
ID
(mA)
16
001aag365
12
8
4
0
0
10
20
30
40
50
IG1 (μA)
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
Tj = 25 C.
Fig 21. Amplifier B: drain current as a function of
gate1 current; typical values
40
Yfs
(mS)
32
24
001aag364
(1)
(2)
(3)
(4)
16
8
(6)
(7)
0
0
8
(5)
16
24
32
ID (mA)
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1 V.
VDS(B) = 5 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 C.
Fig 20. Amplifier B: forward transfer admittance as a
function of drain current; typical values
20
ID
(mA)
16
001aag366
12
8
4
0
0
1
2
3
4
5
VGG (V)
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
Tj = 25 C; RG1 = 86 k (connected to VGG); see
Figure 3.
Fig 22. Amplifier B: drain current as a function of
gate1 supply voltage; typical values
BF1218_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 14 April 2010
© NXP B.V. 2010. All rights reserved.
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