BF1218 Просмотр технического описания (PDF) - NXP Semiconductors.
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BF1218 Datasheet PDF : 23 Pages
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NXP Semiconductors
9. Test information
BF1218
Dual N-channel dual gate MOSFET
RGEN
50 Ω
Vi
VAGC
VDS(A)
5V
4.7 nF
10 kΩ
4.7 nF
G1A
L1
2.2 μH
DA
4.7 nF
50 Ω
4.7 nF
4.7 nF
G2 BF1218 S
G1B
DB
50 Ω
RG1
L2
2.2 μH
4.7 nF
RL
50 Ω
VGG
0V
Fig 33. Cross modulation test set-up for amplifier A
VDS(A)
5V
001aak331
VAGC
VDS(A)
5V
4.7 nF
10 kΩ
4.7 nF
G1A
L1
2.2 μH
DA
50 Ω
4.7 nF
G2 BF1218 S
4.7 nF
G1B
DB
4.7 nF
RGEN
50 Ω
Vi
50 Ω
RG1
VGG
5V
L2
2.2 μH
4.7 nF
RL
50 Ω
VDS(A)
5V
001aak332
Fig 34. Cross modulation test set-up for amplifier B
BF1218_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 14 April 2010
© NXP B.V. 2010. All rights reserved.
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