28F016SV Просмотр технического описания (PDF) - Intel

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производитель

28F016SV

16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile™ MEMORY

Intel 

28F016SV FlashFile™ MEMORY

E

5.3 DC Characteristics (Continued)

VCC = 3.3V ± 10%V, TA = 0°C to +70°C, –40°C to +70°C

3/5# = Pin Set High for 3.3V Operations

Sym

ICCR2

Parameter

VCC Read

Current

Temp

Notes

1,4,

5,6

ICCW VCC Program 1,6

Current for

Word or Byte

ICCE VCC Block

1,6

Erase

Current

ICCES VCC Erase

1,2

Suspend

Current

IPPS VPP Standby/

1

IPPR Read Current

IPPD VPP Deep

1

Power-Down

Current

Commercial

Min Typ Max

20 30

8 12

8 17

6 12

9 17

1

4

± 1 ± 10

30 200

0.2 5

Extended

Min Typ Max Units Test Conditions

20 35 mA VCC = VCC Max

CMOS: CE0#, CE1#

= GND ± 0.2V,

BYTE# = GND ±

0.2V or VCC ±

0.2V, Inputs =

GND ± 0.2V or

VCC ± 0.2V

TTL: CE0#, CE1# =

VIL, BYTE# = VIL

or VIH, Inputs =

VIL or VIH

f = 4 MHz, IOUT =

0 mA

8

12 mA VPP = 12V ± 5%

Program in

Progress

8

17 mA VPP = 5V ± 10%

Program in

Progress

6

12 mA VPP = 12V ± 5%

Block Erase in

Progress

9

17 mA VPP = 5V ± 10%

Block Erase in

Progress

1

4

mA CE0#, CE1# = VIH

Block Erase

Suspended

± 3 ± 10 µA VPP ≤ VCC

70 200 µA VPP > VCC

0.2 5 µA RP# = GND ± 0.2V

30

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