CCS050M12CM2 Просмотр технического описания (PDF) - Cree, Inc
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производитель
CCS050M12CM2 Datasheet PDF : 8 Pages
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Typical Performance
-3
-2.5
-2
-1.5
-1
-0.5
VGS = 0 V
VGS = 5 V
VGS = 10 V
VGS = 15 V
VGS = 20 V
0
0
-25
-50
Drain-Source Voltage, VDS (V)
-75
Conditions:
TJ = 25 °C
tp < 50 µs
-100
Figure 13. 3rd Quadrant Characteristic at 25ºC
20
Conditions:
VDS = 800 V
IDS = 50 A
15
IGS = 10 mA
10
5
0
-5
0
30
60
90
120
150
180
Gate Charge (nC)
Figure 15. Typical Gate Charge Characteristics
10000
1000
CISS
COSS
100
CRSS
10
Conditions:
f = 1 MHz
VAC = 25 mV
1
0
250
500
750
1000
Drain-Source Voltage, VDS (V)
Figure 17. Typical Capacitances vs. Drain-Source
Voltage (0 - 1000V)
-3
-2.5
-2
-1.5
-1
-0.5
0
0
VGS = 0 V
-25
VGS = 5 V
VGS = 10 V
-50
VGS = 15 V
VGS = 20 V
Drain-Source Voltage, VDS (V)
Conditions:
TJ = 150 °C
tp < 50 µs
-75
-100
Figure 14. 3rd Quadrant Characteristic at 150ºC
10000
1000
CISS
COSS
100
CRSS
10
Conditions:
f = 1 MHz
VAC = 25 mV
1
0
50
100
150
200
250
Drain-Source Voltage, VDS (V)
Figure 16. Typical Capacitances vs. Drain-Source
Voltage (0 - 250V)
3.0
Conditions:
VDD = 600 V
TJ = 150 °C
2.5
L = 200 µH
RG = 20 Ohms
VGS = +20V/-5V
2.0
1.5
Eon
Eoff
1.0
0.5
0.0
0
25
50
75
100
125
Drain to Source Current, IDS (A)
Figure 18. Inductive Switching Energy vs.
Drain Current For VDS = 600V, RG = 20 Ω
6
CCS050M12CM2,Rev. -
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