CCS050M12CM2 Просмотр технического описания (PDF) - Cree, Inc
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производитель
CCS050M12CM2 Datasheet PDF : 8 Pages
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Typical Performance
100
90
80
VGS = 12 V
70
Conditions:
IDS = 50 A
tp < 50 µs
60
50
VGS = 14 V
40
VGS = 16 V
30 VGS = 18 V
20 VGS = 20 V
10
0
-50
-25
0
25
50
75
100 125 150
Junction Temperature, TJ (°C)
Figure 7. On-Resistance vs. Temperature
for Various Gate-Source Voltages
-3
-2.5
-2
-1.5
-1
-0.5
0
0
VGS = -5 V
VGS = -2 V
VGS = 0 V
-25
200
Conditions:
tp < 50 µs
VDS = 10 V
150
100
TJ = 25 °C
TJ = 100 °C
TJ = 150 °C
50
0
0
4
8
12
16
20
Gate-Source Voltage, VGS (V)
Figure 8. Transfer Characteristic for Various
Junction Temperatures
-3
-2.5
-2
-1.5
-1
-0.5
0
0
-25
-50
-50
Drain-Source Voltage, VDS (V)
-75
Conditions:
TJ = -40 °C
tp < 50 µs
-100
Figure 9. Diode Characteristic at -40ºC
-75
VGS = -2 V
VGS = -5 V
VGS = 0 V
Drain-Source Voltage, VDS (V)
Conditions:
TJ = 25 °C
tp < 50 µs
-100
Figure 10. Diode Characteristic at 25ºC
-3
-2.5
-2
-1.5
-1
-0.5
0
-3
-2.5
0
-25
-50
-2
-1.5
-1
-0.5
VGS = 0 V
VGS = 5 V
VGS = 10 V
0
0
-25
VGS = 20 V
VGS = 15 V
-50
VGS = -5 V
VGS = 0 V
-75
-75
Conditions:
VGS = -2 V
TJ = 150 °C
tp < 50 µs
-100
Drain-Source Voltage, VDS (V)
Drain-Source Voltage, VDS (V)
Conditions:
TJ = -40 °C
tp < 50 µs
-100
Figure 11. Diode Characteristic at 150ºC
Figure 12. 3rd Quadrant Characteristic at -40ºC
5
CCS050M12CM2,Rev. -
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