CCS050M12CM2 Просмотр технического описания (PDF) - Cree, Inc

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производитель

CCS050M12CM2

1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module

Cree, Inc 

CCS050M12CM2

1.2kV, 50A Silicon Carbide

Six-Pack (Three Phase) Module

Z-FETTM MOSFET and Z-RecTM Diode

Features

• Ultra Low Loss

• Zero Reverse Recovery Current

• Zero Turn-off Tail Current

• High-Frequency Operation

•

•

Positive Temperature Coefficient on VF and VDS(on)

Cu Baseplate, AIN DBC

System Benefits

• Enables Compact and Lightweight Systems

• High Efficiency Operation

• Ease of Transistor Gate Control

• Reduced Cooling Requirements

• Reduced System Cost

Applications

• Solar Inverters

• UPS and SMPS

• Induction Heating

• Regen Drives

• 3-Phase PFC

• Motor Drives

VDS 1.2 kV

ID (TC = 100˚C)

50 A

RDS(on) (TJ = 25˚C)

25 mΩ

EOFF (TJ = 150˚C)

0.6 mJ

Package

Part Number

CCS050M12CM2

Package

Six-Pack

Marking

CCS050M12CM2

Maximum Ratings (TC = 25˚C unless otherwise specified)

Symbol

Parameter

Value

Unit

Test Conditions

VDS

Drain - Source Voltage

VGS

Gate - Source Voltage

ID

Continuous Drain Current

ID(pulse)

Pulsed Drain Current

TJ

Junction Temperature

TC ,TSTG

Visol

Case and Storage Temperature Range

Case Isolation Voltage

LStray

Stray Inductance

M

Mounting Torque

G

Weight

PD

Power Dissipation

1.2

+25/-10

87

50

250

150

kV

V

VGS = 20V, TC=25˚C

A

VGS = 20V, TC=100˚C

A

Pulse width tP = 50 μA

Rate limited by Tjmax,TC = 25˚C

˚C

-40 to +150 ˚C

2.5

kV DC, t=1min

30

nH Measured from pins 20 to 21

5.0

Nm

180

g

337

W TC = 25ºC, TJ < 150ºC

Subject to change without notice.

www.cree.com

Notes

Fig. 21

1

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